摘要 本實驗利用非真空製程成長 Si摻雜之Cu(InGa)Se2的光伏

摘要 本實驗利用非真空製程成長 Si摻雜之Cu(InGa)Se2的光伏元件之吸收層。實驗過程是先將銅硒、銦硒、鎵硒三種化合物，調整其比例並添加純矽，再藉由球磨法製備成CIGS 漿料，並以塗佈法將漿料塗佈於基板上形成前驅薄膜，漿料之 Cu/(In+Ga)原子百分比為1.0，再將前驅層置入紅外線快速升溫爐(RTA)內分別進行300 o C至500 o C 快速退火製程，持溫10分鐘，使薄膜具有黃銅礦(Chalcopyrite)結構。利用 X光繞射分析儀(XRD)觀察晶體結構變化、能量散色光譜儀(EDS)來分析成分變化、和紫外光可見光光譜儀(UV-Vis)分析光學性質。結果得知添加純矽在低溫300 o C 退火後就具有黃銅礦結構之特徵峰(112)，半高寬變窄，晶粒隨之變大，並促進燒結後之結晶性提高，製備出大約1.5~2µm 的薄膜，光學能隙約為1.27eV。 

結果 (英文) 1:

Summary
In this study, the non-absorbing layer of the photovoltaic element in vacuo process of growing a Si-doped Cu (InGa) Se2 of. The experiment is the first copper selenide, indium selenide, gallium selenide three compounds, and to adjust the proportion of pure silica added, and then prepared by ball milling the slurry into the CIGS, and the slurry was applied to a coating method is formed on a substrate precursor film, a slurry of Cu / (In + Ga) atomic percent is 1.0, then rapid heating the precursor layer into an infrared furnace (RTA) for 300 o C to 500 o C are within the rapid thermal annealing process, holding temperature for 10 minutes to a thin film having a chalcopyrite (chalcopyrite) structure. X-ray diffraction analyzer using a change in crystal structure (XRD) were observed, scattered light energy spectroscopy (EDS) to analyze the changes in composition, and ultraviolet-visible spectroscopy (UV-Vis) analyzing the optical properties. The results that pure silica is added with characteristic peaks (112) of a chalcopyrite structure 300 o C in a low temperature annealing after the FWHM is narrowed, the grain becomes larger, and the crystallization is promoted after sintering is improved, prepared about 1.5 ~ 2μm film, the optical bandgap of about 1.27eV.
 

結果 (英文) 2:

Summary
This experiment uses a non-vacuum process to grow the absorption layer of the Photovoltaic module of The Cu (InGa) Se2. The experimental process is to first copper selenium, selenium, selenium three compounds, adjust its proportion and add pure silicon, and then by ball grinding method prepared into CIGS slurry, and coating the slurry on the substrate to form a front-drive film, slurry Cu / (In and Ga Ga) The atomic percentage is 1.0, and the front drive layer is placed in the infrared rapid heating furnace (RTA) for a rapid annealing process of 300 o C to 500 o C, respectively, with a temperature of 10 minutes, giving the film a Charcopyium structure. The X-ray bypass analyzer (XRD) was used to observe changes in crystal structure, energy dispersion spectrometer (EDS) to analyze composition changes, and UV-Vis to analyze optical properties. Results It is learned that the addition of pure silicon at low temperature 300 o C annealing after the characteristic peak (112), half-height and width narrow, grain then become larger, and promote the crystallization after sintering, the preparation of about 1.5 to 2 m film, optical energy gap of about 1.27eV.
 

結果 (英文) 3:

abstract
In this experiment, the absorption layer of Si doped Cu (Inga) se 2 photovoltaic cells was grown by non vacuum process. The experimental process is to adjust the proportion of Cu se, in Se and GA se, add pure silicon, and then prepare CIGS slurry by ball milling. The slurry was coated on the substrate to form the precursor film The Cu / (in + GA) atom percentage is 1.0, and then the precursor layer is put into the infrared rapid heating furnace (RTA) for the rapid annealing process from 300 OC to 500 OC for 10 minutes, which makes the film have chalcopyrite structure X-ray diffraction (XRD) was used to observe the change of crystal structure, energy dispersive spectrometer (EDS) to analyze the change of composition, and ultraviolet visible spectrometer (UV VIS) to analyze the optical properties After annealing, it has the characteristic peak (112) of chalcopyrite structure. The half height, width and width become narrow, and the grains become larger, and the crystallinity is improved after sintering. The thin films with an optical energy gap of about 1.27ev are prepared.